bf966s document number 85004 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 1 13625 1 4 3 2 g 2 g 1 d s electrostatic sensitive device. observe precautions for handling. n-channel dual gate mos-fieldeffect tetrode, depletion mode features ? integrated gate protection diodes high cross modulation performance low noise figure high agc-range low feedback capacitance low input capacitance lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications input- and mixer stages especially uhf-tuners. mechanical data case: to-50 plastic case weight: approx. 124 mg marking: bf966s pinning: 1 = drain, 2 = source, 3 = gate 1, 4 = gate 2 parts table absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m cu part ordering ccode marking package bf966s bf966sa or BF966SB bf966s to50 bf966sa bf966sa bf966s to50 BF966SB BF966SB bf966s to50 parameter test condition symbol value unit drain - source voltage v ds 20 v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w e3
www.vishay.com 2 document number 85004 rev. 1.5, 15-apr-05 bf966s vishay semiconductors electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified v ds = 15 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, - v g1s = - v g2s = 4 v v (br)ds 20 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 814v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 814v gate 1 - source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 50 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 50 na drain current v ds = 15 v, v g1s = 0, v g2s = 4 v bf966s i dss 418ma bf966sa i dss 410.5ma BF966SB i dss 9.5 18 ma gate 1 - source cut-off voltage v ds = 15 v, v g2s = 4 v, i d = 20 a -v g1s(off) 2.5 v gate 2 - source cut-off voltage v ds = 15 v, v g1s = 0, i d = 20 a-v g2s(off) 2.0 v parameter test condition symbol min ty p. max unit forward transadmittance | y 21s | 15 18.5 ms gate 1 input capacitance c issg1 2.2 2.6 pf gate 2 input capacitance v g1s = 0, v g2s = 4 v c issg2 1.1 pf feedback capacitance c rss 25 35 ff output capacitance c oss 0.8 1.2 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 25 db g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 18 db agc range v g2s = 4 to -2 v, f = 800 mhz ? g ps 40 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f1.0db g s = 3,3 ms, g l = 1 ms, f = 800 mhz f1.8db figure 1. total power dissipati on vs. ambient temperature 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 96 12159 p - total power dissipation ( mw ) tot t amb - ambient temperature ( c) iure 2draincurrentsdrainoureoltae 0 4 8 12 16 20 24 28 32 36 0246810121416 v ds C drain source voltag e(v) 12762 i C drain current ( ma ) d v g1s =2v 1.5 v 1v 0v C0.5 v C1 v 0.5 v v g2s =4v
bf966s document number 85004 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 3 figure 3. drain current vs. gate 1 source voltage figure 4. drain current vs. gate 2 source voltage figure 5. gate 1 input capacitance vs. drain current 0 10 20 30 40 50 60 70 80 90 100 C1012345 v g1s C gate 1 source voltag e(v) 12763 i C drain current ( ma ) d v g2s =6v 5v 4v 0v 2v 1v 3v v ds =15 v C1 v 0 10 20 30 40 50 60 70 80 C1012345 v g2s C gate 2 source voltag e(v) 12764 i C drain current ( ma ) d 0v 2v 1v 3v v ds =15 v C1 v v g1s =4v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 3 6 9 12151821242730 i d C drain current ( ma ) 12765 c C gate 1 input capacitance ( pf ) issg1 v ds =15v v g2s =4v f=1mhz figure 6. output capacitance vs. drain source voltage figure 7. gate 2 input capacitance vs. gate 2 source voltage figure 8. transducer gain vs. gate 1 source voltage 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 12 14 16 18 20 v ds C drain source voltag e(v) 12766 c C output capacitance ( pf ) oss v g2s =4v i d =10ma f=1mhz 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 C3C2C10123456 v g2s C gate 2 source voltag e(v) 12767 c C gate 2 input capacitance ( pf ) issg2 v ds =15v v g1s =0 f=1mhz C70 C60 C50 C40 C30 C20 C10 0 10 C5C4C3C2C10123 v g1s C gate 1 source voltag e(v) 12768 s Ctransducer gain( db ) 2 21 4v 0v 2v 1v 3v f = 200 mhz C0.5 v v g2s = C2...C3 v C1 v
www.vishay.com 4 document number 85004 rev. 1.5, 15-apr-05 bf966s vishay semiconductors figure 9. forward transadmittance vs. drain current figure 10. short circuit input admittance figure 11. short circuit re verse transfer admittance 0 2 4 6 8 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 i d C drain current ( ma ) 12769 y C forwardtransadmittance ( ms ) 21s v ds =15v f=1mhz v g2s =4v 2v 3v 1v 0.5 v 0v 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 re (y 11 )(ms) 12770 im(y)(ms) 11 v ds =15v v g2s =4v f = 100...1300 mhz f = 1300 mhz 700 mhz 400 mhz 1000 mhz 100 mhz i d =5ma i d =10ma i d =20ma C0.1 0.0 0.1 0.2 0.3 0.0 0.1 0.2 0.3 0.4 0.5 re (y 12 )(ms) 12772 im(y)(ms) 12 v ds =15v v g2s =4v f = 100...1300 mhz f = 1300 mhz 700 mhz i d =5ma 10 ma 20 ma 1000 mhz figure 12. short circuit fo rward transfer admittance figure 13. short circuit output admittance C40 C35 C30 C25 C20 C15 C10 C5 0 5 C8 C4 0 4 8 12 16 20 24 re (y 21 )(ms) 12771 im(y)(ms) 21 v ds =15v v g2s =4v f = 100...1300 mhz f = 100 mhz 1300 mhz 1000 mhz 400 mhz 700 mhz i d =5ma 10 ma 20 ma 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 re (y 22 )(ms) 12773 im(y)(ms) 22 v ds =15v v g2s =4v f =1 00...1300 mhz f = 1300 mhz 1000 mhz 400 mhz 100 mhz i d =5ma 20 ma 700 mhz i d =10ma
bf966s document number 85004 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 5 v ds = 15 v, i d = 5 to 20 ma, v g2s = 4 v, z 0 = 50 ? s 11 s 21 s 12 s 22 figure 14. input reflection coefficient figure 15. forward tr ansmission coefficient 12924 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 ? 0.2 0.5 1 2 5 1300 mhz 400 700 1000 100 12926 0 90 180 C90 0.8 1.6 C150 C120 C60 C30 120 150 60 30 1300 mhz 400 700 1000 100 i = 20 ma d i = 10 ma d i =5ma d figure 16. reverse transmission coefficient figure 17. output reflection coefficient 12925 0 90 180 C90 0.008 0.016 C150 C120 C60 C30 120 150 60 30 1300 mhz 400 100 1000 i = 20 ma d i = 10 ma d i =5ma d 12927 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 ? 0.2 0.5 1 2 5 1300 mhz 700 100
www.vishay.com 6 document number 85004 rev. 1.5, 15-apr-05 bf966s vishay semiconductors package dimensions in mm 96 12242
bf966s document number 85004 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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